BST52,115 datasheet

Маркировка

BST52,115
Производитель

NXP Semiconductors
Описание

NXP Semiconductors BST52,115 Collector- Base Voltage Vcbo: 90 V Collector- Emitter Voltage Vceo Max: 80 V Configuration: Single Current - Collector (ic) (max): 1A Current - Collector Cutoff (max): 50nA Dc Current Gain (hfe) (min) @ Ic, Vce: 2000 @ 500mA, 10V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: 200MHz ID_COMPONENTS: 1947674 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Collector Cut-off Current: 0.05 uA Maximum Dc Collector Current: 1 A Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab) Power - Max: 1.3W Series: - Transistor Polarity: NPN Transistor Type: NPN - Darlington Vce Saturation (max) @ Ib, Ic: 1.3V @ 500?µA, 500mA Voltage - Collector Emitter Breakdown (max): 80V Other Names: 933644270115, BST52 T/R
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8 шт.
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